Design of high electron mobility devices with composite nitride channels
Identifieur interne : 00C079 ( Main/Repository ); précédent : 00C078; suivant : 00C080Design of high electron mobility devices with composite nitride channels
Auteurs : RBID : Pascal:03-0349495Descripteurs français
- Pascal (Inist)
- 8530T, 8530D, Etude expérimentale, Transistor mobilité électron élevée, Gallium composé, Aluminium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Masse effective, Mobilité porteur charge, Indium composé, Claquage dispositif semiconducteur, Modèle dispositif semiconducteur, Méthode Monte Carlo.
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Abstract
Field effect transistors based on a GaN/AlGaN system have shown remarkable performance characteristics in a wide range of device applications. However, due to the large effective mass of GaN, the mobility in the channel is small. In this work, we consider a GaN/AlGaN structure with a thin InN channel of the order of a few monolayers. We find that mobility in the channel can improve considerably while breakdown characteristics are not expected to suffer. Mobilities of ≃2500 cm2 (Vs)-1 are predicted along with high sheet charges for low interface disorder. Good agreement with experimental results is observed for higher degrees of disorder within the model. At higher electric fields, we find that most electron population transfers to higher valleys or other subbands that lie in AlGaN or GaN. We also compare the low-field mobility-charge product for this structure with the conventional AlGaN/GaN structure and find that the two values are similar. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Design of high electron mobility devices with composite nitride channels</title><author><name sortKey="Singh, Madhusudan" uniqKey="Singh M">Madhusudan Singh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Singh, Jasprit" uniqKey="Singh J">Jasprit Singh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0349495</idno><date when="2003-08-15">2003-08-15</date><idno type="stanalyst">PASCAL 03-0349495 AIP</idno><idno type="RBID">Pascal:03-0349495</idno><idno type="wicri:Area/Main/Corpus">00CD69</idno><idno type="wicri:Area/Main/Repository">00C079</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Carrier mobility</term><term>Effective mass</term><term>Experimental study</term><term>Gallium compounds</term><term>High electron mobility transistors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Monte Carlo methods</term><term>Semiconductor device breakdown</term><term>Semiconductor device models</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530T</term><term>8530D</term><term>Etude expérimentale</term><term>Transistor mobilité électron élevée</term><term>Gallium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Masse effective</term><term>Mobilité porteur charge</term><term>Indium composé</term><term>Claquage dispositif semiconducteur</term><term>Modèle dispositif semiconducteur</term><term>Méthode Monte Carlo</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Field effect transistors based on a GaN/AlGaN system have shown remarkable performance characteristics in a wide range of device applications. However, due to the large effective mass of GaN, the mobility in the channel is small. In this work, we consider a GaN/AlGaN structure with a thin InN channel of the order of a few monolayers. We find that mobility in the channel can improve considerably while breakdown characteristics are not expected to suffer. Mobilities of ≃2500 cm2 (Vs)-1 are predicted along with high sheet charges for low interface disorder. Good agreement with experimental results is observed for higher degrees of disorder within the model. At higher electric fields, we find that most electron population transfers to higher valleys or other subbands that lie in AlGaN or GaN. We also compare the low-field mobility-charge product for this structure with the conventional AlGaN/GaN structure and find that the two values are similar. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Design of high electron mobility devices with composite nitride channels</s1></fA08><fA11 i1="01" i2="1"><s1>SINGH (Madhusudan)</s1></fA11><fA11 i1="02" i2="1"><s1>SINGH (Jasprit)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>2498-2506</s1></fA20><fA21><s1>2003-08-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0349495</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Field effect transistors based on a GaN/AlGaN system have shown remarkable performance characteristics in a wide range of device applications. However, due to the large effective mass of GaN, the mobility in the channel is small. In this work, we consider a GaN/AlGaN structure with a thin InN channel of the order of a few monolayers. We find that mobility in the channel can improve considerably while breakdown characteristics are not expected to suffer. Mobilities of ≃2500 cm2 (Vs)-1 are predicted along with high sheet charges for low interface disorder. Good agreement with experimental results is observed for higher degrees of disorder within the model. At higher electric fields, we find that most electron population transfers to higher valleys or other subbands that lie in AlGaN or GaN. We also compare the low-field mobility-charge product for this structure with the conventional AlGaN/GaN structure and find that the two values are similar. © 2003 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F22</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8530T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8530D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Transistor mobilité électron élevée</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>High electron mobility transistors</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Masse effective</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Effective mass</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Mobilité porteur charge</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Carrier mobility</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Claquage dispositif semiconducteur</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor device breakdown</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Modèle dispositif semiconducteur</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor device models</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Méthode Monte Carlo</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Monte Carlo methods</s0></fC03><fN21><s1>246</s1></fN21><fN47 i1="01" i2="1"><s0>0330M000166</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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